MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information, please see our guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18311 Products showing for MOSFETs

    Infineon
    N
    111 A
    650 V
    0.018 Ω
    TO-247
    CoolMOS™
    Through Hole
    3
    -
    Enhancement
    4.5V
    -
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Vishay
    N
    1.5 A
    30 V
    185 mΩ
    SOT-323
    -
    Surface Mount
    3
    -12 V, +12 V
    Enhancement
    -
    0.6V
    400 mW
    -
    Single
    2.2mm
    +150 °C
    1
    Si
    1.4 nC @ 4.5 V
    1.35mm
    Infineon
    N
    18 A
    600 V
    0.18 Ω
    DPAK (TO-252)
    CoolMOS™ P7
    Surface Mount
    3
    -
    -
    4V
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Vishay
    N
    3.3 A
    400 V
    1.8 Ω
    TO-220AB
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    50 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    20 nC @ 10 V
    4.7mm
    Infineon
    P
    180 A
    40 V
    0.0024 Ω
    D2PAK-7
    IPB
    Surface Mount
    7
    -
    Enhancement
    2.2V
    -
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Wolfspeed
    N
    90 A
    1200 V
    34 mΩ
    TO-247
    -
    Through Hole
    3
    +25 V
    Enhancement
    4V
    2V
    463 W
    -
    Single
    16.13mm
    +150 °C
    1
    SiC
    161 nC @ 20 V
    21.1mm
    onsemi
    P
    30 A
    60 V
    26 mΩ
    TO-220F
    QFET
    Through Hole
    3
    -25 V, +25 V
    Enhancement
    -
    2V
    62 W
    -
    Single
    10.16mm
    +175 °C
    1
    Si
    84 nC @ 10 V
    4.7mm
    onsemi
    N
    3 A
    20 V
    35 mΩ
    SOT-23
    PowerTrench
    Surface Mount
    3
    -8 V, +8 V
    Enhancement
    -
    0.4V
    500 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    7 nC @ 4.5 V
    1.4mm
    DiodesZetex
    N
    4.6 A
    40 V
    0.052 Ω
    SOT-23
    DMN4035
    Surface Mount
    3
    -
    Enhancement
    3V
    -
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Vishay
    P
    2 A
    200 V
    3 Ω
    TO-220FP
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    27 W
    -
    Single
    -
    +150 °C
    1
    Si
    13 nC @ 10 V
    -
    Infineon
    N
    36 A
    100 V
    44 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -16 V, +16 V
    Enhancement
    2V
    1V
    140 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    74 nC @ 5 V
    4.69mm
    Nexperia
    N
    840 mA
    30 V
    440 mΩ
    SOT-416 (SC-75)
    -
    Surface Mount
    3
    -12 V, +12 V
    Enhancement
    1.5V
    0.5V
    530 mW
    -
    Single
    1.8mm
    +150 °C
    1
    Si
    0.65 nC @ 4.5 V
    0.9mm
    onsemi
    N
    200 mA
    50 V
    3.5 Ω
    SOT-23
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    1.5V
    0.5V
    225 mW
    -
    Single
    2.9mm
    +150 °C
    1
    Si
    -
    1.3mm
    DiodesZetex
    P
    280 mA
    60 V
    5 Ω
    E-Line
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3.5V
    -
    700 mW
    -
    Single
    4.77mm
    +150 °C
    1
    Si
    -
    2.41mm
    STMicroelectronics
    N
    50 A
    60 V
    18 mΩ
    TO-220
    STripFET II
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    110 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    44.5 nC @ 10 V
    4.6mm
    Infineon
    P
    74 A
    55 V
    20 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    200 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    180 nC @ 10 V
    4.69mm
    STMicroelectronics
    N
    16 A
    60 V
    100 mΩ
    TO-220
    STripFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    45 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    10 nC @ 10 V
    4.6mm
    Vishay
    P
    6.1 A
    50 V
    280 mΩ
    TO-220AB
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    40 W
    -
    Single
    10.51mm
    +150 °C
    1
    Si
    17 nC @ 10 V
    4.65mm
    Infineon
    P
    23 A
    100 V
    117 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    140 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    97 nC @ 10 V
    4.69mm
    Infineon
    N
    59 A
    55 V
    -
    DPAK (TO-252)
    HEXFET
    Surface Mount
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
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