Infineon IPP Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA2

RS Stock No.:: 229-1847
Mfr. Part No.:: IPP120P04P4L03AKSA2
Brand:: Infineon

Infineon IPP Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA2

Bulk discount available

Subtotal (1 pack of 5 units)*

£14.75

(exc. VAT)

£17.70

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Plus 25 unit(s) shipping from 17 November 2025
Plus 50 unit(s) shipping from 24 November 2025
Final 500 unit(s) shipping from 15 January 2026

Units	Per unit	Per Pack*
5 - 20	£2.95	£14.75
25 - 45	£2.626	£13.13
50 - 120	£2.448	£12.24
125 - 245	£2.272	£11.36
250 +	£2.094	£10.47

*price indicative

RS Stock No.:: 229-1847
Mfr. Part No.:: IPP120P04P4L03AKSA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	120 A
	Maximum Drain Source Voltage	40 V
	Package Type	TO-220
	Series	IPP
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	0.0034 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	136 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +5 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Silicon
	Length	15.65mm
	Typical Gate Charge @ Vgs	180 nC
	Width	9.9mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Automotive Standard	AEC
	Height	2.54mm
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 120 A
	Maximum Drain Source Voltage 40 V
	Package Type TO-220
	Series IPP
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 0.0034 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 136 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +5 V
	Maximum Operating Temperature +175 °C
	Transistor Material Silicon
	Length 15.65mm
	Typical Gate Charge @ Vgs 180 nC
	Width 9.9mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Automotive Standard AEC
	Height 2.54mm
	Forward Diode Voltage 1.3V

Datasheet - IPP120P04P4L03AKSA2

Infineon Series IPP MOSFET, 120A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IPP120P04P4L03AKSA2

This silicon MOSFET is designed for high performance within various applications. The component features a TO-220 package that enhances its capability for effective thermal dissipation. With a maximum continuous drain current of 120A and a drain-source voltage of 40V, it offers excellent operational flexibility in demanding environments. The MOSFET operates efficiently across a wide temperature range, making it suitable for automotive and industrial applications.

Features & Benefits

• P-channel enhancement mode ensures efficient switching performance
• AEC qualified, meeting rigorous automotive standards
• Maximum operating temperature of +175°C allows for demanding requirement
• MSL1 rating supports high-temperature reflow processes

Applications

• Used in automotive control systems for efficient power management
• Effective for electric motor drive in robotics
• Incorporated into power supply circuits in industrial machinery
• Suitable for consumer electronics where compact size is essential

What is the significance of the maximum continuous drain current rating?

The maximum continuous drain current rating indicates the highest amount of current the device can handle under normal operating conditions, which is essential for ensuring reliability in applications demanding high current capacity.

How does the low Rds(on) contribute to power efficiency?

A low Rds(on) reduces power losses during operation, allowing devices to run cooler and enhancing overall system energy efficiency, which is particularly beneficial in battery-operated designs.

What safety features does this component offer for harsh environments?

This device is 100% avalanche tested, ensuring it can withstand transient conditions without failure, which is crucial for protecting circuits in unpredictable environments such as automotive and industrial applications.

What performance characteristics should one consider when integrating this component into existing systems?

Key characteristics like gate threshold voltage, maximum gate-source voltage, and thermal resistance should be evaluated to ensure compatibility with existing circuit designs and to optimise performance.

How does the operating temperature range enhance its usability in different applications?

With an operating temperature range from -55°C to +175°C, this MOSFET is versatile enough for use across a broad spectrum of applications, from extreme cold environments to high-temperature operational settings.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today