Infineon IPP Type P-Channel MOSFET, 62 A, 100 V Enhancement, 3-Pin TO-220 IPP330P10NMAKSA1
- RS Stock No.:
- 235-4860
- Mfr. Part No.:
- IPP330P10NMAKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£120.70
(exc. VAT)
£144.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 450 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.414 | £120.70 |
| 100 - 200 | £2.173 | £108.65 |
| 250 + | £2.052 | £102.60 |
*price indicative
- RS Stock No.:
- 235-4860
- Mfr. Part No.:
- IPP330P10NMAKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -189nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Width | 15.95 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -189nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Length 10.36mm | ||
Width 15.95 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in TO-220 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
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