Infineon IPP Type P-Channel MOSFET, 62 A, 100 V Enhancement, 3-Pin TO-220 IPP330P10NMAKSA1
- RS Stock No.:
- 235-4861
- Mfr. Part No.:
- IPP330P10NMAKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£3.71
(exc. VAT)
£4.45
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 18 unit(s) shipping from 29 December 2025
- Plus 1 unit(s) shipping from 29 December 2025
- Plus 455 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £3.71 |
| 10 - 24 | £3.52 |
| 25 - 49 | £3.38 |
| 50 - 99 | £3.23 |
| 100 + | £3.00 |
*price indicative
- RS Stock No.:
- 235-4861
- Mfr. Part No.:
- IPP330P10NMAKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | -189nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Width | 15.95 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs -189nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Width 15.95 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in TO-220 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
Related links
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin TO-220 IPP330P10NMAKSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin D2PAK IPB330P10NMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin D2PAK IPB320P10LMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP20EP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin DPAK IPD11DP10NMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP16DP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin DPAK IPD18DP10LMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin D2PAK IPB19DP10NMATMA1


