Infineon IPB Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2
- RS Stock No.:
- 229-1818
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,244.00
(exc. VAT)
£1,493.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 23 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.244 | £1,244.00 |
*price indicative
- RS Stock No.:
- 229-1818
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK (TO-263) | |
| Series | IPB | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0031 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Series IPB | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0031 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2
The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.
Summary of Features
•P-channel - Logic Level - Enhancement mode
•AEC qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (RoHS compliant)
•100% Avalanche tested
•AEC qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (RoHS compliant)
•100% Avalanche tested
Benefits
•No charge pump required for high side drive.
•Simple interface drive circuit
•World's lowest RDSon at 40V
•Highest current capability
•Lowest switching and conduction power losses for highest thermal efficiency
•Robust packages with superior quality and reliability
•Standard packages TO-252, TO-263, TO-220, TO-262
•Simple interface drive circuit
•World's lowest RDSon at 40V
•Highest current capability
•Lowest switching and conduction power losses for highest thermal efficiency
•Robust packages with superior quality and reliability
•Standard packages TO-252, TO-263, TO-220, TO-262
Potential Applications
•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
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