Infineon IPB Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2

Subtotal (1 reel of 1000 units)*

£1,510.00

(exc. VAT)

£1,810.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +£1.51£1,510.00

*price indicative

RS Stock No.:
229-1818
Mfr. Part No.:
IPB120P04P4L03ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

40 V

Series

IPB

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0031 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Silicon

Number of Elements per Chip

1

IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2


The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.

Summary of Features


•P-channel - Logic Level - Enhancement mode
•AEC qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (RoHS compliant)
•100% Avalanche tested

Benefits


•No charge pump required for high side drive.
•Simple interface drive circuit
•World's lowest RDSon at 40V
•Highest current capability
•Lowest switching and conduction power losses for highest thermal efficiency
•Robust packages with superior quality and reliability
•Standard packages TO-252, TO-263, TO-220, TO-262

Potential Applications


•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump

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