N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

RS Stock No.:: 897-7311
Mfr. Part No.:: IPP041N12N3GXKSA1
Brand:: Infineon

N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon IPP041N12N3GXKSA1

394 In stock - FREE next working day delivery available

Price Each (In a Pack of 2)

£6.48

(exc. VAT)

£7.78

(inc. VAT)

Units	Per unit	Per Pack*
2 - 18	£6.48	£12.96
20 - 98	£5.39	£10.78
100 - 198	£4.67	£9.34
200 - 498	£4.45	£8.90
500 +	£3.985	£7.97

*price indicative

RS Stock No.:: 897-7311
Mfr. Part No.:: IPP041N12N3GXKSA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	120 V
Series	OptiMOS™ 3
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Width	4.57mm
Number of Elements per Chip	1
Length	10.36mm
Typical Gate Charge @ Vgs	158 nC
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	15.95mm
Forward Diode Voltage	1.2V