Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK IPB020NE7N3GATMA1
- RS Stock No.:
- 825-9213
- Mfr. Part No.:
- IPB020NE7N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£20.95
(exc. VAT)
£25.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 260 unit(s) ready to ship
- Plus 999,999,735 unit(s) shipping from 16 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £4.19 | £20.95 |
| 10 - 20 | £3.98 | £19.90 |
| 25 - 45 | £3.812 | £19.06 |
| 50 - 120 | £3.562 | £17.81 |
| 125 + | £3.352 | £16.76 |
*price indicative
- RS Stock No.:
- 825-9213
- Mfr. Part No.:
- IPB020NE7N3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.3V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 155 nC @ 10 V | |
| Length | 10.31mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.3V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 155 nC @ 10 V | ||
Length 10.31mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
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