N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB029N06N3GATMA1

RS Stock No.:: 914-0185
Mfr. Part No.:: IPB029N06N3GATMA1
Brand:: Infineon

N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB029N06N3GATMA1

2930 In stock - FREE next working day delivery available

Price Each (In a Pack of 10)

£0.612

(exc. VAT)

£0.734

(inc. VAT)

Units	Per unit	Per Pack*
10 +	£0.612	£6.12

*price indicative

RS Stock No.:: 914-0185
Mfr. Part No.:: IPB029N06N3GATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Not Applicable

Product Details

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	60 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	188 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	124 nC @ 10 V
Number of Elements per Chip	1
Length	10.31mm
Width	9.45mm
Minimum Operating Temperature	-55 °C
Height	4.57mm
Forward Diode Voltage	1.2V