Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1
- RS Stock No.:
- 145-8902
- Mfr. Part No.:
- IPP032N06N3GXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£69.15
(exc. VAT)
£83.00
(inc. VAT)
FREE delivery for orders over £50.00
- 150 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.383 | £69.15 |
100 - 200 | £1.148 | £57.40 |
250 - 450 | £1.065 | £53.25 |
500 - 950 | £0.996 | £49.80 |
1000 + | £0.926 | £46.30 |
*price indicative
- RS Stock No.:
- 145-8902
- Mfr. Part No.:
- IPP032N06N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A | |
Maximum Drain Source Voltage | 60 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3.2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 188 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.36mm | |
Typical Gate Charge @ Vgs | 124 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.57mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Height | 15.95mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 188 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 124 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.57mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 15.95mm | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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