Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK IPB027N10N3GATMA1

Subtotal (1 reel of 1000 units)*

£2,325.00

(exc. VAT)

£2,790.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +£2.325£2,325.00

*price indicative

RS Stock No.:
911-0890
Mfr. Part No.:
IPB027N10N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.31mm

Number of Elements per Chip

1

Width

9.45mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

155 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

4.57mm

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links