N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

RS Stock No.:: 911-0822
Mfr. Part No.:: IPB036N12N3GATMA1
Brand:: Infineon

N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

1000 In stock - FREE next working day delivery available

Price Each (On a Reel of 1000)

£2.73

(exc. VAT)

£3.28

(inc. VAT)

Units	Per unit	Per Reel*
1000 +	£2.73	£2,730.00

*price indicative

RS Stock No.:: 911-0822
Mfr. Part No.:: IPB036N12N3GATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	120 V
Series	OptiMOS™ 3
Package Type	D2PAK-7
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	3.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Length	10.31mm
Typical Gate Charge @ Vgs	158 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.57mm