Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB017N06N3GATMA1

Subtotal (1 reel of 1000 units)*

£1,330.00

(exc. VAT)

£1,600.00

(inc. VAT)

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1000 +£1.33£1,330.00

*price indicative

RS Stock No.:
911-0812
Mfr. Part No.:
IPB017N06N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK-7

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

206 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

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