Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1
- RS Stock No.:
- 898-6918
- Mfr. Part No.:
- IPB011N04NGATMA1
- Brand:
- Infineon
Subtotal (1 pack of 4 units)*
£9.952
(exc. VAT)
£11.944
(inc. VAT)
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- 2,516 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
4 + | £2.488 | £9.95 |
*price indicative
- RS Stock No.:
- 898-6918
- Mfr. Part No.:
- IPB011N04NGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 180 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | D2PAK-7 | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 1.1 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 250 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 188 nC @ 10 V | |
Length | 10.31mm | |
Width | 9.45mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 4.57mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK-7 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 188 nC @ 10 V | ||
Length 10.31mm | ||
Width 9.45mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
RoHS Status: Not Applicable
Infineon OptiMOS™3 Power MOSFETs, up to 40V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1
Features & Benefits
• Low Rds(on) reduces power loss during operation
• Surface mount design allows easy integration into PCBs
• Capable of dissipating up to 250W, serving a variety of applications
• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics
Applications
• Suitable for power management in industrial automation
• Employed in DC-DC converters and inverters
• Used for load switching in power distribution systems
• Applicable in renewable energy systems, such as solar inverters
What is the maximum continuous drain current for this device?
Can it operate in high temperatures?
What are the gate threshold voltage specifications?
What type of mounting does this component support?
Related links
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