Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1

RS Stock No.:: 898-6918
Mfr. Part No.:: IPB011N04NGATMA1
Brand:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1

Subtotal (1 pack of 4 units)*

£9.952

(exc. VAT)

£11.944

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,512 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
4 +	£2.488	£9.95

*price indicative

RS Stock No.:: 898-6918
Mfr. Part No.:: IPB011N04NGATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS 3
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.1mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	188nC
	Maximum Operating Temperature	175°C
	Width	9.45 mm
	Height	4.57mm
	Length	10.31mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS 3
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.1mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 188nC
	Maximum Operating Temperature 175°C
	Width 9.45 mm
	Height 4.57mm
	Length 10.31mm
	Standards/Approvals No
	Automotive Standard No

RoHS Status: Not Applicable

Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1

This MOSFET is optimised for high-performance applications in the electrical and mechanical sectors. It features a sturdy design and efficient operation, making it suitable for automation systems. With a maximum continuous drain current of 180 A and a maximum drain-source voltage of 40V, it provides enhanced efficiency and reliability in circuit performance.

Features & Benefits

• High current handling improves system efficiency and performance

• Low Rds(on) reduces power loss during operation

• Surface mount design allows easy integration into PCBs

• Capable of dissipating up to 250W, serving a variety of applications

• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics

Applications

• Utilised in motor control and drive systems

• Suitable for power management in industrial automation

• Employed in DC-DC converters and inverters

• Used for load switching in power distribution systems

• Applicable in renewable energy systems, such as solar inverters

What is the maximum continuous drain current for this device?

The device can handle up to 180A of continuous drain current, making it appropriate for high-power applications.

Can it operate in high temperatures?

Yes, it has a maximum operating temperature of +175°C, allowing consistent performance under challenging conditions.

What are the gate threshold voltage specifications?

The maximum gate threshold voltage is 4V, while the minimum is 2V, providing flexibility in operational compatibility.

What type of mounting does this component support?

This product is designed for surface mounting, facilitating straightforward installation on various circuit boards.

How does this MOSFET contribute to power efficiency?

Its low Rds(on) Value of 1.1 mΩ significantly reduces power loss, enhancing the efficiency of electronic systems overall.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today