Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1
- RS Stock No.:
- 898-6918
- Mfr. Part No.:
- IPB011N04NGATMA1
- Brand:
- Infineon
Subtotal (1 pack of 4 units)*
£9.952
(exc. VAT)
£11.944
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 2,512 unit(s) shipping from 02 March 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 4 + | £2.488 | £9.95 |
*price indicative
- RS Stock No.:
- 898-6918
- Mfr. Part No.:
- IPB011N04NGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 188nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Width | 9.45 mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 188nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Width 9.45 mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1
Features & Benefits
Applications
What is the maximum continuous drain current for this device?
Can it operate in high temperatures?
What are the gate threshold voltage specifications?
What type of mounting does this component support?
How does this MOSFET contribute to power efficiency?
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 7-Pin TO-263 IPB036N12N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IPB017N06N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 IPB025N10N3GATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
