Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1
- RS Stock No.:
- 145-9552
- Mfr. Part No.:
- IPB011N04NGATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,270.00
(exc. VAT)
£1,520.00
(inc. VAT)
FREE delivery for orders over £50.00
- 2,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £1.27 | £1,270.00 |
*price indicative
- RS Stock No.:
- 145-9552
- Mfr. Part No.:
- IPB011N04NGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 180 A | |
Maximum Drain Source Voltage | 40 V | |
Series | OptiMOS™ 3 | |
Package Type | D2PAK-7 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 1.1 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 250 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 188 nC @ 10 V | |
Length | 10.31mm | |
Number of Elements per Chip | 1 | |
Width | 9.45mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.57mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ 3 | ||
Package Type D2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 188 nC @ 10 V | ||
Length 10.31mm | ||
Number of Elements per Chip 1 | ||
Width 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, up to 40V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1
Features & Benefits
• Low Rds(on) reduces power loss during operation
• Surface mount design allows easy integration into PCBs
• Capable of dissipating up to 250W, serving a variety of applications
• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics
Applications
• Suitable for power management in industrial automation
• Employed in DC-DC converters and inverters
• Used for load switching in power distribution systems
• Applicable in renewable energy systems, such as solar inverters
What is the maximum continuous drain current for this device?
Can it operate in high temperatures?
What are the gate threshold voltage specifications?
What type of mounting does this component support?
Related links
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