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Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1

RS Stock No.:: 145-9552
Mfr. Part No.:: IPB011N04NGATMA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1

Subtotal (1 reel of 1000 units)*

£1,270.00

(exc. VAT)

£1,520.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	£1.27	£1,270.00

*price indicative

RS Stock No.:: 145-9552
Mfr. Part No.:: IPB011N04NGATMA1
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	40 V
	Series	OptiMOS™ 3
	Package Type	D2PAK-7
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	1.1 mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation	250 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Width	9.45mm
	Length	10.31mm
	Typical Gate Charge @ Vgs	188 nC @ 10 V
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	4.57mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 40 V
	Series OptiMOS™ 3
	Package Type D2PAK-7
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 1.1 mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation 250 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Width 9.45mm
	Length 10.31mm
	Typical Gate Charge @ Vgs 188 nC @ 10 V
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 4.57mm

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1

This MOSFET is optimised for high-performance applications in the electrical and mechanical sectors. It features a sturdy design and efficient operation, making it suitable for automation systems. With a maximum continuous drain current of 180 A and a maximum drain-source voltage of 40V, it provides enhanced efficiency and reliability in circuit performance.

Features & Benefits

• High current handling improves system efficiency and performance
• Low Rds(on) reduces power loss during operation
• Surface mount design allows easy integration into PCBs
• Capable of dissipating up to 250W, serving a variety of applications
• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics

Applications

• Utilised in motor control and drive systems
• Suitable for power management in industrial automation
• Employed in DC-DC converters and inverters
• Used for load switching in power distribution systems
• Applicable in renewable energy systems, such as solar inverters

What is the maximum continuous drain current for this device?

The device can handle up to 180A of continuous drain current, making it appropriate for high-power applications.

Can it operate in high temperatures?

Yes, it has a maximum operating temperature of +175°C, allowing consistent performance under challenging conditions.

What are the gate threshold voltage specifications?

The maximum gate threshold voltage is 4V, while the minimum is 2V, providing flexibility in operational compatibility.

What type of mounting does this component support?

This product is designed for surface mounting, facilitating straightforward installation on various circuit boards.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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