Infineon OptiMOS™ 3 N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 IPB065N15N3GATMA1
- RS Stock No.:
- 178-7444
- Mfr. Part No.:
- IPB065N15N3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£2,170.00
(exc. VAT)
£2,600.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 03 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.17 | £2,170.00 |
*price indicative
- RS Stock No.:
- 178-7444
- Mfr. Part No.:
- IPB065N15N3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | D2PAK-7 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 6.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Width | 4.57mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.2V | |
| Height | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type D2PAK-7 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 6.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Width 4.57mm | ||
Number of Elements per Chip 1 | ||
Length 10.31mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Height 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
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