Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
- RS Stock No.:
- 145-9320
- Mfr. Part No.:
- IPP041N12N3GXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£101.05
(exc. VAT)
£121.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 250 unit(s) ready to ship
- Plus 999,999,700 unit(s) shipping from 12 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £2.021 | £101.05 |
*price indicative
- RS Stock No.:
- 145-9320
- Mfr. Part No.:
- IPP041N12N3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 120 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.57mm | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 158 nC | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 120 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.57mm | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 158 nC | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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