SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	76 A
	Maximum Drain Source Voltage	600 V
	Series	SuperFET II
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	41 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	595 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Length	15.87mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	4.82mm
	Typical Gate Charge @ Vgs	277 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	20.82mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 76 A
	Maximum Drain Source Voltage 600 V
	Series SuperFET II
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 41 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 595 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Length 15.87mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Width 4.82mm
	Typical Gate Charge @ Vgs 277 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 20.82mm

onsemi SuperFET II N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

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