onsemi N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 FCP190N65S3

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RS Stock No.:
172-3425
Mfr. Part No.:
FCP190N65S3
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

10.67mm

Number of Elements per Chip

1

Width

4.7mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

33 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

16.3mm

COO (Country of Origin):
CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ

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