onsemi SuperFET II N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

Bulk discount available

Subtotal (1 tube of 30 units)*

£147.81

(exc. VAT)

£177.36

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 120£4.927£147.81
150 - 270£4.277£128.31
300 +£4.085£122.55

*price indicative

RS Stock No.:
124-1458
Mfr. Part No.:
FCH041N60F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

600 V

Series

SuperFET II

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

595 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

277 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Width

4.82mm

Minimum Operating Temperature

-55 °C

Height

20.82mm

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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