onsemi SuperFET II N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-220 FCP104N60F

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Subtotal (1 tube of 50 units)*

£153.45

(exc. VAT)

£184.15

(inc. VAT)

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Last RS stock
  • Final 50 unit(s), ready to ship
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Per Tube*
50 - 50£3.069£153.45
100 +£2.916£145.80

*price indicative

RS Stock No.:
145-4425
Mfr. Part No.:
FCP104N60F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

SuperFET II

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

357 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.672mm

Length

10.36mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

110 nC @ 10 V

Height

15.215mm

Minimum Operating Temperature

-55 °C

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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