N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220F onsemi FCPF190N60

RS Stock No.:: 864-7913
Mfr. Part No.:: FCPF190N60
Brand:: onsemi

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220F onsemi FCPF190N60

Available to back order for despatch when stock is available

Price Each (In a Pack of 2)

£3.01

(exc. VAT)

£3.61

(inc. VAT)

Units	Per unit	Per Pack*
2 +	£3.01	£6.02

*price indicative

RS Stock No.:: 864-7913
Mfr. Part No.:: FCPF190N60
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220F
Series	SuperFET II
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	170 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	39 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	10.36mm
Number of Elements per Chip	1
Transistor Material	Si
Width	4.9mm
Typical Gate Charge @ Vgs	57 nC @ 10 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	16.07mm