onsemi SuperFET II N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 FCP190N60E
- RS Stock No.:
- 772-9102
- Mfr. Part No.:
- FCP190N60E
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£2.29
(exc. VAT)
£2.748
(inc. VAT)
FREE delivery for orders over £50.00
- 1,238 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 + | £1.145 | £2.29 |
*price indicative
- RS Stock No.:
- 772-9102
- Mfr. Part No.:
- FCP190N60E
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 600 V | |
Series | SuperFET II | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 190 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 208 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Length | 10.67mm | |
Maximum Operating Temperature | +150 °C | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Series SuperFET II | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +150 °C | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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