onsemi SuperFET II N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z
- RS Stock No.:
- 774-1124
- Mfr. Part No.:
- FCU900N60Z
- Brand:
- onsemi
Subtotal (1 bag of 5 units)*
£9.42
(exc. VAT)
£11.305
(inc. VAT)
FREE delivery for orders over £50.00
- Final 295 unit(s), ready to ship
Units | Per unit | Per Bag* |
---|---|---|
5 + | £1.884 | £9.42 |
*price indicative
- RS Stock No.:
- 774-1124
- Mfr. Part No.:
- FCU900N60Z
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 4.5 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | IPAK (TO-251) | |
Series | SuperFET II | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 900 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 52 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | +30 V | |
Transistor Material | Si | |
Width | 2.5mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 13.1 nC @ 10 V | |
Length | 6.8mm | |
Number of Elements per Chip | 1 | |
Height | 6.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type IPAK (TO-251) | ||
Series SuperFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 52 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +30 V | ||
Transistor Material Si | ||
Width 2.5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13.1 nC @ 10 V | ||
Length 6.8mm | ||
Number of Elements per Chip 1 | ||
Height 6.3mm | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin IPAK FCU900N60Z
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-220 FCP190N60_GF102
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-220 FCP104N60F
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-247 FCH041N60E
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-220 FCP190N60E
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-220F FCPF190N60
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-247 FCH041N60F
- onsemi SuperFET II N-Channel MOSFET 800 V, 3-Pin TO-220F FCPF400N80Z