onsemi N-Channel MOSFET, 14 A, 50 V, 3-Pin IPAK RFD14N05L
- RS Stock No.:
- 325-7580
- Mfr. Part No.:
- RFD14N05L
- Brand:
- onsemi
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 325-7580
- Mfr. Part No.:
- RFD14N05L
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 14 A | |
Maximum Drain Source Voltage | 50 V | |
Package Type | IPAK (TO-251) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 100 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 48 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Typical Gate Charge @ Vgs | 25 nC @ 5 V, 40 nC @ 10 V | |
Width | 2.5mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.8mm | |
Minimum Operating Temperature | -55 °C | |
Height | 6.3mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 50 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Typical Gate Charge @ Vgs 25 nC @ 5 V, 40 nC @ 10 V | ||
Width 2.5mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.8mm | ||
Minimum Operating Temperature -55 °C | ||
Height 6.3mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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