onsemi SuperFET II N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z

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Subtotal (1 tube of 75 units)*

£63.825

(exc. VAT)

£76.575

(inc. VAT)

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Last RS stock
  • Final 225 unit(s), ready to ship
Units
Per unit
Per Tube*
75 - 75£0.851£63.83
150 - 225£0.638£47.85
300 - 450£0.619£46.43
525 - 975£0.542£40.65
1050 +£0.495£37.13

*price indicative

RS Stock No.:
864-4992
Mfr. Part No.:
FCU900N60Z
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Series

SuperFET II

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13.1 nC @ 10 V

Length

6.8mm

Number of Elements per Chip

1

Width

2.5mm

Height

7.57mm

Minimum Operating Temperature

-55 °C

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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