Infineon CoolMOS™ Silicon N-Channel MOSFET, 76 A, 600 V, 4-Pin TO-247-4 IPZA60R037P7XKSA1
- RS Stock No.:
- 222-4730
- Mfr. Part No.:
- IPZA60R037P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£156.81
(exc. VAT)
£188.16
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 90 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £5.227 | £156.81 |
| 60 - 120 | £4.965 | £148.95 |
| 150 + | £4.652 | £139.56 |
*price indicative
- RS Stock No.:
- 222-4730
- Mfr. Part No.:
- IPZA60R037P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 76 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247-4 | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.037 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 76 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247-4 | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.037 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of Cool MOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products
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