Infineon CoolMOS Type N-Channel MOSFET, 36.5 A, 950 V Enhancement, 3-Pin PG-TO-247 IPW95R130PFD7XKSA1
- RS Stock No.:
- 284-922
- Mfr. Part No.:
- IPW95R130PFD7XKSA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 284-922
- Mfr. Part No.:
- IPW95R130PFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36.5A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | PG-TO-247 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36.5A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type PG-TO-247 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an Advanced power device represents the latest innovation in super junction technology, specifically designed for demanding applications such as lighting and industrial power supplies. The integration of ultra fast body diodes enhances responsiveness, making it Ideal for resonant topologies. With robust performance and superior reliability, this device stands at the forefront of efficiency in power management. Special attention has been given to reducing reverse recovery charge, enabling higher switching frequencies and increased power density in designs.
Integrated fast body diode ensures reliability
Best in class thermal performance for efficient heat dissipation
Durable construction promotes long term stability
Seamless integration into existing circuits
Optimal for high voltage applications with enhanced safety
Compact package reduces PCB footprint and increases flexibility
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