Infineon CoolMOS SiC N-Channel MOSFET, 36.5 A, 950 V, 3-Pin PG-TO247-3 IPW95R130PFD7XKSA1

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Packaging Options:
RS Stock No.:
284-923
Mfr. Part No.:
IPW95R130PFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36.5 A

Maximum Drain Source Voltage

950 V

Package Type

PG-TO247-3

Series

CoolMOS

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an advanced power device represents the latest innovation in super junction technology, specifically designed for demanding applications such as lighting and industrial power supplies. The integration of ultra fast body diodes enhances responsiveness, making it ideal for resonant topologies. With robust performance and superior reliability, this device stands at the forefront of efficiency in power management. Special attention has been given to reducing reverse recovery charge, enabling higher switching frequencies and increased power density in designs.

Integrated fast body diode ensures reliability
Best in class thermal performance for efficient heat dissipation
Durable construction promotes long term stability
Seamless integration into existing circuits
Optimal for high voltage applications with enhanced safety
Compact package reduces PCB footprint and increases flexibility

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