Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 950 V, 3-Pin DPAK IPD95R2K0P7ATMA1

Subtotal (1 reel of 2500 units)*

£885.00

(exc. VAT)

£1,062.50

(inc. VAT)

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  • 5,000 unit(s) ready to ship
  • Plus 999,992,500 unit(s) shipping from 05 February 2026
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2500 +£0.354£885.00

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RS Stock No.:
219-5994
Mfr. Part No.:
IPD95R2K0P7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

950 V

Package Type

TO-252

Series

CoolMOS™ P7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability

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