Infineon CoolMOS™ P7 N-Channel MOSFET, 6 A, 950 V, 3-Pin SOT-223 IPN95R1K2P7ATMA1

Bulk discount available

Subtotal (1 pack of 10 units)*

£8.47

(exc. VAT)

£10.16

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5,870 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40£0.847£8.47
50 - 90£0.805£8.05
100 - 240£0.771£7.71
250 - 490£0.737£7.37
500 +£0.685£6.85

*price indicative

Packaging Options:
RS Stock No.:
219-6005
Mfr. Part No.:
IPN95R1K2P7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

950 V

Package Type

SOT-223

Series

CoolMOS™ P7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability

Related links