Infineon CoolMOS™ Silicon N-Channel MOSFET, 111 A, 650 V, 3-Pin TO-247 IPW60R018CFD7XKSA1

Save 5% when you buy 90 units

Subtotal (1 tube of 30 units)*

£217.47

(exc. VAT)

£260.97

(inc. VAT)

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Per Tube*
30 - 30£7.249£217.47
60 - 60£7.063£211.89
90 +£6.886£206.58

*price indicative

RS Stock No.:
222-4718
Mfr. Part No.:
IPW60R018CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

111 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.018 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23

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