Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247

RS Stock No.:: 220-7453
Mfr. Part No.:: IPW60R090CFD7XKSA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

£99.39

(exc. VAT)

£119.28

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 90 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Tube*
30 - 30	£3.313	£99.39
60 - 120	£3.147	£94.41
150 +	£3.015	£90.45

*price indicative

RS Stock No.:: 220-7453
Mfr. Part No.:: IPW60R090CFD7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Standards/Approvals	No
	Height	21.1mm
	Width	5.21 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Standards/Approvals No
	Height 21.1mm
	Width 5.21 mm
	Automotive Standard No

Datasheet - IPW60R090CFD7XKSA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions