Infineon CoolMOS™ Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1
- RS Stock No.:
- 220-7439
- Mfr. Part No.:
- IPS60R1K0CEAKMA1
- Brand:
- Infineon
Save 37% when you buy 1000 units
Subtotal (1 pack of 20 units)*
£9.60
(exc. VAT)
£11.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,500 unit(s) ready to ship
- Plus 999,998,480 unit(s) shipping from 08 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.48 | £9.60 |
| 100 - 180 | £0.37 | £7.40 |
| 200 - 480 | £0.346 | £6.92 |
| 500 - 980 | £0.322 | £6.44 |
| 1000 + | £0.298 | £5.96 |
*price indicative
- RS Stock No.:
- 220-7439
- Mfr. Part No.:
- IPS60R1K0CEAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | IPAK (TO-251) | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.8 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type IPAK (TO-251) | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 2 | ||
The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Low conduction losses
Low switching losses
Suitable for hard and soft switching
Easy controllable switching behaviour
Improved efficiency and consequent reduction of power consumption
Less design in effort
Easy to use
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Low conduction losses
Low switching losses
Suitable for hard and soft switching
Easy controllable switching behaviour
Improved efficiency and consequent reduction of power consumption
Less design in effort
Easy to use
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