Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

RS Stock No.:: 220-7407
Mfr. Part No.:: IPD60R170CFD7ATMA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

Subtotal (1 pack of 5 units)*

£8.88

(exc. VAT)

£10.655

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,310 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 +	£1.776	£8.88

*price indicative

RS Stock No.:: 220-7407
Mfr. Part No.:: IPD60R170CFD7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	76W
	Typical Gate Charge Qg @ Vgs	28nC
	Forward Voltage Vf	1V
	Standards/Approvals	No
	Height	2.41mm
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 76W
	Typical Gate Charge Qg @ Vgs 28nC
	Forward Voltage Vf 1V
	Standards/Approvals No
	Height 2.41mm
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD60R170CFD7ATMA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions