Infineon CoolMOS™ Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1

Subtotal (1 tube of 75 units)*

£15.90

(exc. VAT)

£19.05

(inc. VAT)

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  • 1,500 unit(s) ready to ship
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Per Tube*
75 +£0.212£15.90

*price indicative

RS Stock No.:
220-7438
Mfr. Part No.:
IPS60R1K0CEAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK (TO-251)

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Low conduction losses
Low switching losses
Suitable for hard and soft switching
Easy controllable switching behaviour
Improved efficiency and consequent reduction of power consumption
Less design in effort
Easy to use

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