Infineon CoolMOS™ Silicon N-Channel MOSFET, 4 A, 700 V, 3-Pin IPAK IPSA70R1K4P7SAKMA1

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Subtotal (1 tube of 75 units)*

£23.25

(exc. VAT)

£27.75

(inc. VAT)

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  • 1,500 unit(s) ready to ship
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Units
Per unit
Per Tube*
75 +£0.31£23.25

*price indicative

RS Stock No.:
222-4708
Mfr. Part No.:
IPSA70R1K4P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

700 V

Package Type

IPAK (TO-251)

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0014 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour

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