Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251
- RS Stock No.:
- 222-4712
- Mfr. Part No.:
- IPSA70R600P7SAKMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 75 units)*
£37.20
(exc. VAT)
£44.625
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 08 March 2027
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Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £0.496 | £37.20 |
| 150 - 300 | £0.387 | £29.03 |
| 375 - 675 | £0.362 | £27.15 |
| 750 - 1800 | £0.337 | £25.28 |
| 1875 + | £0.313 | £23.48 |
*price indicative
- RS Stock No.:
- 222-4712
- Mfr. Part No.:
- IPSA70R600P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43.1W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43.1W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Related links
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