MPN

Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251

RS Stock No.:: 222-4712
Mfr. Part No.:: IPSA70R600P7SAKMA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251

Bulk discount available

Subtotal (1 tube of 75 units)*

£48.825

(exc. VAT)

£58.575

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 02 October 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
75 - 75	£0.651	£48.83
150 - 300	£0.507	£38.03
375 - 675	£0.475	£35.63
750 - 1800	£0.442	£33.15
1875 +	£0.41	£30.75

*price indicative

RS Stock No.:: 222-4712
Mfr. Part No.:: IPSA70R600P7SAKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-251
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	10.5nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	43.1W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	2.38 mm
	Height	6.1mm
	Length	6.6mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-251
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 10.5nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 43.1W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 2.38 mm
	Height 6.1mm
	Length 6.6mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPSA70R600P7SAKMA1

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour