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Infineon CoolMOS Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1

RS Stock No.:: 222-4711
Mfr. Part No.:: IPSA70R450P7SAKMA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1

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Subtotal (1 pack of 15 units)*

£9.645

(exc. VAT)

£11.58

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,395 unit(s) ready to ship

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Units	Per unit	Per Pack*
15 - 135	£0.643	£9.65
150 - 360	£0.611	£9.17
375 - 735	£0.598	£8.97
750 - 1485	£0.56	£8.40
1500 +	£0.521	£7.82

*price indicative

RS Stock No.:: 222-4711
Mfr. Part No.:: IPSA70R450P7SAKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS
	Package Type	TO-251
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	13.1nC
	Maximum Gate Source Voltage Vgs	16 V
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	50W
	Maximum Operating Temperature	150°C
	Width	2.38 mm
	Standards/Approvals	No
	Length	6.6mm
	Height	6.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS
	Package Type TO-251
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 13.1nC
	Maximum Gate Source Voltage Vgs 16 V
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 50W
	Maximum Operating Temperature 150°C
	Width 2.38 mm
	Standards/Approvals No
	Length 6.6mm
	Height 6.1mm
	Automotive Standard No

Datasheet - IPSA70R450P7SAKMA1

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour