Infineon CoolMOS™ Silicon N-Channel MOSFET, 10 A, 700 V, 3-Pin IPAK IPSA70R450P7SAKMA1

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Subtotal (1 pack of 15 units)*

£7.245

(exc. VAT)

£8.70

(inc. VAT)

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  • Plus 999,998,595 unit(s) shipping from 09 July 2026
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Per Pack*
15 - 135£0.483£7.25
150 - 360£0.459£6.89
375 - 735£0.449£6.74
750 - 1485£0.421£6.32
1500 +£0.391£5.87

*price indicative

Packaging Options:
RS Stock No.:
222-4711
Mfr. Part No.:
IPSA70R450P7SAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

700 V

Package Type

IPAK (TO-251)

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.45 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour

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