Infineon CoolMOS P7 N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1
- RS Stock No.:
- 220-7443
- Mfr. Part No.:
- IPSA70R1K2P7SAKMA1
- Brand:
- Infineon
Get a bulk buy discount
Add 125 more to save £2.12
View bulk pricing optionsSubtotal (1 pack of 25 units)*
£8.92
(exc. VAT)
£10.70
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 1,425 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 25 - 100 | £0.357 | £8.93 | - |
| 125 - 225 | £0.34 | £8.50 | £2.12 |
| 250 - 600 | £0.325 | £8.13 | £8.00 |
| 625 - 1225 | £0.311 | £7.78 | £28.75 |
| 1250 + | £0.25 | £6.25 | £133.75 |
*price indicative
- RS Stock No.:
- 220-7443
- Mfr. Part No.:
- IPSA70R1K2P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Width | 2.38mm | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Width 2.38mm | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Automotive Standard No | ||
The Infineon has developed he 700V Cool MOS P7 super junction MOSFET series to serve today’s and especially tomorrow’s trends in fly back topologies. It addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. By combining customers’ feedback with over 20 years of super junction MOSFET experience, 700V Cool MOS P7 enables best fit for target applications in terms of:
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product
Related links
- Infineon CoolMOS P7 N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1
- Infineon CoolMOS P7 N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1
- Infineon CoolMOS P7 N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251 IPU80R750P7AKMA1
- Infineon CoolMOS P7 N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251 IPS80R750P7AKMA1
- Infineon CoolMOS P7 N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1
- Infineon CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1
- Infineon CoolMOS P7 N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1