Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1
- RS Stock No.:
- 220-7444
- Mfr. Part No.:
- IPSA70R2K0P7SAKMA1
- Brand:
- Infineon
Subtotal (1 tube of 75 units)*
£15.075
(exc. VAT)
£18.075
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,200 unit(s) ready to ship
- Plus 999,998,775 unit(s) shipping from 16 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 + | £0.201 | £15.08 |
*price indicative
- RS Stock No.:
- 220-7444
- Mfr. Part No.:
- IPSA70R2K0P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.7 A | |
| Maximum Drain Source Voltage | 700 V | |
| Series | CoolMOS™ P7 | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.7 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS™ P7 | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss
Excellent thermal behavior
Integrated ESD protection diode
Low switching losses(Eoss)
Product validationa cc.JEDEC Standard
Cost competitive technology
Lower temperature
High ES Druggedness
Enables efficiency gainsat higher switching frequencies
Enableshighpowerdensitydesignsandsmallformfactors
Excellent thermal behavior
Integrated ESD protection diode
Low switching losses(Eoss)
Product validationa cc.JEDEC Standard
Cost competitive technology
Lower temperature
High ES Druggedness
Enables efficiency gainsat higher switching frequencies
Enableshighpowerdensitydesignsandsmallformfactors
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