Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1

Subtotal (1 tube of 75 units)*

£15.075

(exc. VAT)

£18.075

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
75 +£0.201£15.08

*price indicative

RS Stock No.:
220-7444
Mfr. Part No.:
IPSA70R2K0P7SAKMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.7 A

Maximum Drain Source Voltage

700 V

Package Type

IPAK (TO-251)

Series

CoolMOS™ P7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss
Excellent thermal behavior
Integrated ESD protection diode
Low switching losses(Eoss)
Product validationa cc.JEDEC Standard
Cost competitive technology
Lower temperature
High ES Druggedness
Enables efficiency gainsat higher switching frequencies
Enableshighpowerdensitydesignsandsmallformfactors

Related links