Infineon CoolMOS P7 N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1
- RS Stock No.:
- 220-7445
- Mfr. Part No.:
- IPSA70R2K0P7SAKMA1
- Brand:
- Infineon
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 25 - 225 | £0.492 | £12.30 | - |
| 250 - 600 | £0.468 | £11.70 | £6.00 |
| 625 - 1225 | £0.457 | £11.43 | £21.87 |
| 1250 - 2475 | £0.428 | £10.70 | £80.00 |
| 2500 + | £0.344 | £8.60 | £370.00 |
*price indicative
- RS Stock No.:
- 220-7445
- Mfr. Part No.:
- IPSA70R2K0P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 17.6W | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Width | 2.38mm | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 17.6W | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Width 2.38mm | ||
Height 6.1mm | ||
Automotive Standard No | ||
The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss
Excellent thermal behavior
Integrated ESD protection diode
Low switching losses(Eoss)
Product validationa cc.JEDEC Standard
Cost competitive technology
Lower temperature
High ES Druggedness
Enables efficiency gainsat higher switching frequencies
Enableshighpowerdensitydesignsandsmallformfactors
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