Infineon CoolMOS™ P7 N-Channel MOSFET, 12.5 A, 700 V, 3-Pin IPAK IPS70R360P7SAKMA1
- RS Stock No.:
- 217-2580
- Mfr. Part No.:
- IPS70R360P7SAKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 75 units)*
£34.275
(exc. VAT)
£41.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 675 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £0.457 | £34.28 |
| 150 - 300 | £0.398 | £29.85 |
| 375 - 675 | £0.371 | £27.83 |
| 750 - 1800 | £0.343 | £25.73 |
| 1875 + | £0.325 | £24.38 |
*price indicative
- RS Stock No.:
- 217-2580
- Mfr. Part No.:
- IPS70R360P7SAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12.5 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | IPAK SL (TO-251 SL) | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 360 mO | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.5 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type IPAK SL (TO-251 SL) | ||
Series CoolMOS™ P7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mO | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses(Eoss)
Product validation acc. JEDEC Standard
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses(Eoss)
Product validation acc. JEDEC Standard
Related links
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