Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R360P7SATMA1

Bulk discount available

Subtotal (1 pack of 20 units)*

£11.36

(exc. VAT)

£13.64

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4,240 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 80£0.568£11.36
100 - 180£0.54£10.80
200 - 480£0.517£10.34
500 - 980£0.494£9.88
1000 +£0.46£9.20

*price indicative

Packaging Options:
RS Stock No.:
215-2526
Mfr. Part No.:
IPN70R360P7SATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12.5A

Maximum Drain Source Voltage Vds

700V

Package Type

SOT-223

Series

700V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.4nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

7.2W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 700V Cool MOS™ P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. The latest CoolMOS™P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses (Eoss)

Related links