N-Channel MOSFET Transistor & Diode, 9.4 A, 700 V, 3-Pin IPAK Infineon IPSA70R1K2P7SAKMA1
- RS Stock No.:
- 220-7442
- Mfr. Part No.:
- IPSA70R1K2P7SAKMA1
- Brand:
- Infineon
1500 In stock - FREE next working day delivery available
Price Each (In a Tube of 75)
£0.46
(exc. VAT)
£0.55
(inc. VAT)
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £0.46 | £34.50 |
| 150 - 300 | £0.354 | £26.55 |
| 375 - 675 | £0.331 | £24.825 |
| 750 - 1800 | £0.308 | £23.10 |
| 1875 + | £0.285 | £21.375 |
*price indicative
- RS Stock No.:
- 220-7442
- Mfr. Part No.:
- IPSA70R1K2P7SAKMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon has developed he 700V Cool MOS P7 super junction MOSFET series to serve today’s and especially tomorrow’s trends in fly back topologies. It addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. By combining customers’ feedback with over 20 years of super junction MOSFET experience, 700V Cool MOS P7 enables best fit for target applications in terms of:
Extremely low FOM R DS(on) x E oss
lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.4 A |
| Maximum Drain Source Voltage | 700 V |
| Package Type | IPAK (TO-251) |
| Series | CoolMOS™ P7 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.2 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Number of Elements per Chip | 1 |
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