Infineon CoolMOS™ Silicon N-Channel MOSFET, 77.5 A, 650 V, 3-Pin TO-247 IPW60R041P6FKSA1

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Subtotal (1 tube of 30 units)*

£175.77

(exc. VAT)

£210.93

(inc. VAT)

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  • 330 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 30£5.859£175.77
60 - 120£5.566£166.98
150 +£5.214£156.42

*price indicative

RS Stock No.:
222-4720
Mfr. Part No.:
IPW60R041P6FKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

77.5 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.041 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23

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