Infineon CoolMOS™ Silicon N-Channel MOSFET, 77.5 A, 650 V, 3-Pin TO-247 IPW60R041P6FKSA1
- RS Stock No.:
- 222-4720
- Mfr. Part No.:
- IPW60R041P6FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£175.77
(exc. VAT)
£210.93
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 330 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £5.859 | £175.77 |
| 60 - 120 | £5.566 | £166.98 |
| 150 + | £5.214 | £156.42 |
*price indicative
- RS Stock No.:
- 222-4720
- Mfr. Part No.:
- IPW60R041P6FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 77.5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.041 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 77.5 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.041 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Pb-free lead plating
RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R041P6FKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R041C6FKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R030M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R027M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R072M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R083M1HXKSA1