Infineon CoolMOS™ Silicon N-Channel MOSFET, 111 A, 650 V, 3-Pin TO-247 IPW60R018CFD7XKSA1
- RS Stock No.:
- 222-4719
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£13.25
(exc. VAT)
£15.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 489 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
1 - 4 | £13.25 |
5 - 9 | £12.59 |
10 - 24 | £12.06 |
25 - 49 | £11.53 |
50 + | £10.73 |
*price indicative
- RS Stock No.:
- 222-4719
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 111 A | |
Maximum Drain Source Voltage | 650 V | |
Series | CoolMOS™ | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.018 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 111 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.018 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
Related links
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- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1