Infineon CoolMOS™ Silicon N-Channel MOSFET, 111 A, 650 V, 3-Pin TO-247 IPW60R018CFD7XKSA1

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Subtotal (1 unit)*

£13.25

(exc. VAT)

£15.90

(inc. VAT)

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1 - 4£13.25
5 - 9£12.59
10 - 24£12.06
25 - 49£11.53
50 +£10.73

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Packaging Options:
RS Stock No.:
222-4719
Mfr. Part No.:
IPW60R018CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

111 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.018 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23

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