Infineon CoolMOS Type N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1

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Subtotal (1 unit)*

£11.63

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£13.96

(inc. VAT)

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  • Plus 509 unit(s) shipping from 01 June 2026
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Units
Per unit
1 - 4£11.63
5 - 9£11.05
10 - 24£10.58
25 - 49£10.12
50 +£9.42

*price indicative

Packaging Options:
RS Stock No.:
222-4719
Mfr. Part No.:
IPW60R018CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

111A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

251nC

Maximum Power Dissipation Pd

416W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

16.13mm

Height

5.21mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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