MPN

Infineon CoolMOS Type N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1

RS Stock No.:: 222-4729
Mfr. Part No.:: IPZ65R065C7XKSA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£10.52

(exc. VAT)

£12.62

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 318 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	£5.26	£10.52
10 - 18	£4.68	£9.36
20 - 48	£4.365	£8.73
50 - 98	£4.10	£8.20
100 +	£3.79	£7.58

*price indicative

RS Stock No.:: 222-4729
Mfr. Part No.:: IPZ65R065C7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-247
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	171W
	Typical Gate Charge Qg @ Vgs	65nC
	Width	5.21 mm
	Length	16.13mm
	Standards/Approvals	No
	Height	21.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-247
	Series CoolMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 171W
	Typical Gate Charge Qg @ Vgs 65nC
	Width 5.21 mm
	Length 16.13mm
	Standards/Approvals No
	Height 21.1mm
	Automotive Standard No

Datasheet - IPZ65R065C7XKSA1

The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Increased MOSFET dv/dt ruggedness

Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on) /package

Pb-free plating, halogen free mold compound