Infineon CoolMOS N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- RS Stock No.:
- 222-4728
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Brand:
- Infineon
Get a bulk buy discount
Add 60 more to save 4%
View bulk pricing optionsSubtotal (1 tube of 30 units)*
£113.70
(exc. VAT)
£136.50
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 30 | £3.79 | £113.70 | - |
| 60 - 120 | £3.601 | £108.03 | 4% |
| 150 + | £3.373 | £101.19 | 11% |
*price indicative
- RS Stock No.:
- 222-4728
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 171W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 171W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Pb-free plating, halogen free mold compound
Related links
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- Infineon CoolMOS N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247 IPZA60R037P7XKSA1
- Infineon CoolMOS N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247 IPZ60R017C7XKSA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 IPW65R048CFDAFKSA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1
- Infineon CoolMOS N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-263 IPB65R065C7ATMA2
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPA70R900P7SXKSA1


