Infineon CoolMOS™ Silicon N-Channel MOSFET, 6 A, 700 V, 3-Pin TO-220 FP IPA70R900P7SXKSA1

Save 18% when you buy 750 units

Subtotal (1 pack of 15 units)*

£8.715

(exc. VAT)

£10.455

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 360 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 60£0.581£8.72
75 - 135£0.551£8.27
150 - 360£0.529£7.94
375 - 735£0.505£7.58
750 +£0.471£7.07

*price indicative

Packaging Options:
RS Stock No.:
222-4644
Mfr. Part No.:
IPA70R900P7SXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

700 V

Package Type

TO-220 FP

Series

CoolMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode

Related links