Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1

RS Stock No.:: 826-9272
Mfr. Part No.:: BSP297H6327XTSA1
Brand:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1

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Subtotal (1 pack of 50 units)*

£28.85

(exc. VAT)

£34.60

(inc. VAT)

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Temporarily out of stock

200 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
50 - 50	£0.577	£28.85
100 - 200	£0.381	£19.05
250 - 450	£0.358	£17.90
500 - 1200	£0.335	£16.75
1250 +	£0.312	£15.60

*price indicative

RS Stock No.:: 826-9272
Mfr. Part No.:: BSP297H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	660mA
	Maximum Drain Source Voltage Vds	200V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	0.84V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	12.9nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Height	1.6mm
	Standards/Approvals	No
	Width	3.5 mm
	Distrelec Product Id	304-44-414
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 660mA
	Maximum Drain Source Voltage Vds 200V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf 0.84V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 12.9nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Height 1.6mm
	Standards/Approvals No
	Width 3.5 mm
	Distrelec Product Id 304-44-414
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1

This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.

Features & Benefits

• N-channel configuration improves switching efficiency

• Low gate threshold voltage ensures compatibility with logic levels

• High voltage ratings accommodate a range of applications

• Enhanced power dissipation capabilities support effective thermal management

• AEC-Q101 qualification adheres to automotive industry standards

• Compact SOT-223 package supports space-efficient designs

Applications

• Utilised for motor control in automotive systems

• Applied in power management for consumer electronics

• Used in battery management systems for energy regulation

• Employed in signal amplification within communication devices

• Ideal for switch-mode power supplies that improve efficiency

What is the maximum operating temperature for optimal performance?

The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.

How should the MOSFET be installed for best results?

Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.

What type of materials is this MOSFET made from?

It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.

Can it withstand severe voltage conditions during operation?

Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.

How does the gate charge affect its performance?

The typical total gate charge is 12.9nC at 10V, ensuring fast switching times and enhanced circuit efficiency.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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